Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
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概要
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We investigated the effects of field-plate structures on the DC and small signal characteristics of 4H-silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs). In comparison with the source-connected field plate, the gate-connected field plate resulted in superior frequency response while having similar DC characteristics. With the optimized field plate structure in conjunction with a buried gate, the estimated power was enhanced by 〜48 % with compatible frequency response.
- 2010-06-23
著者
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Cha Ho-Young
School of Electronic and Electrical Engineering, Hongik University
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LEE Jae-Gil
School of Electronic and Electrical Engineering, Hongik University
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CHO Chun-Hyung
Department of Electronic & Electrical Engineering, Hongik University
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Lee Jae-gil
School Of Electronic And Electrical Engineering Hongik University
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Cha Ho-young
School Of Electrical And Computer Engineering Cornell University
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CHA Ho-Young
School of Electronic and Electrical Engineering, Hongik University:Department of Electronic & Electrical Engineering, Hongik University
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CHO Chun-Hyung
Department of Electronic & Electrical Engineering, Hongik University
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Cho Chun-Hyung
Department of Electrical Engineering, 200 Broun Hall, Auburn University, Auburn, AL 36849, U.S.A.
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