4H-SiC Avalanche Photodiodes for 280nm UV Detection

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概要

• 論文の詳細を見る

• We designed and fabricated 4H-SiC PIN avalanche photodiodes (APD) for UV detection. The thickness of an intrinsic layer in a PIN structure was optimized in order to achieve the highest quantum efficiency at the wavelength of interest. The optimized 4H-SiC PIN APDs exhibited a maximum external quantum efficiency of >80% at the wavelength of 280nm and a gain greater than 40000. Both electrical and optical characteristics of the fabricated APDs were in agreement with those predicted from simulation.

• 社団法人電子情報通信学会の論文
• 2009-06-17

著者

• Cha Ho-Young

  School of Electronic and Electrical Engineering, Hongik University

• CHO Chun-Hyung

  Department of Electronic & Electrical Engineering, Hongik University

• Cha Ho‐young

  Hongik Univ. Seoul Kor

• Cha Ho-young

  School Of Electrical And Computer Engineering Cornell University

• Cho Chun‐hyung

  Hongik Univ. Chung‐nam Kor

• Park B.-R.

  School of Electronic and Electrical Engineering, Hongik University

• Sung H.-K.

  School of Electronic and Electrical Engineering, Hongik University

• Sandvik P.

  GE Global Research Center

• Sung H.-k.

  School Of Electronic And Electrical Engineering Hongik University

• Sandvik P.

  Ge Global Research Center Niskayana

• Park B.-r.

  School Of Electronic And Electrical Engineering Hongik University

• Cho Chun-Hyung

  Department of Electrical Engineering, 200 Broun Hall, Auburn University, Auburn, AL 36849, U.S.A.

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