Strain effects in resistor stress sensor fabricated on (001) silicon and their influences on the determination of piezoresistive coefficients(Session 6A : TFTs and Sensors)
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概要
- 論文の詳細を見る
Currently, the resistor stress sensors are widely used to measure the die stresses in electronic packages. This work focuses on a study of strain effects in resistor stress sensors fabricated on (001) silicon and their influences on the determination of piezoresistive (pi) coefficients for the precise measurements of die stresses in electronic packages. We obtained the corrected values of the pi-coefficients by considering the strain effects, without which more than 50 % discrepancies may be induced
- 社団法人電子情報通信学会の論文
- 2010-06-23
著者
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Cha Ho-Young
School of Electronic and Electrical Engineering, Hongik University
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CHO Chun-Hyung
Department of Electronic & Electrical Engineering, Hongik University
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Cha Ho-young
School Of Electronic & Electrical Engineering College Of Engineering Hongik University
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Cha Ho-young
School Of Electrical And Computer Engineering Cornell University
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Cho Chun-hyung
Department Of Electronic & Electrical Engineering College Of Science And Technology Hongik Unive
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Cho Chun-Hyung
Department of Electrical Engineering, 200 Broun Hall, Auburn University, Auburn, AL 36849, U.S.A.
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