Electrical and Optical Modeling of 4H-SiC Avalanche Photodiodes
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概要
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Optimal physical models and material parameters for 4H-SiC avalanche photodiodes (APDs) were studied using a two-dimensional device simulation tool. In the models, we took account of temperature-dependent impact ionization and absorption coefficient as a function of wavelength. The absorption coefficient spectra derived in this work exhibited a rapid increase below ${\sim}300$ nm, which can be qualitatively incorporated into indirect and direct band transition models. The simulated characteristics were in good agreement with the measured characteristics.
- 2008-07-25
著者
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Cha Ho-young
School Of Electrical And Computer Engineering Cornell University
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Sandvik Peter
Micro and Nano Structures Technologies, GE Global Research, 1 Research Circle, Niskayuna, NY 12309, U.S.A.
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