Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors
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概要
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We investigated the effects of various field plate and buried gate structures on the DC and small signal characteristics of 4H-silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs). In comparison with the source-connected field plate, the gate-connected field plate exhibited superior frequency response while having similar DC characteristics. In order to further enhance the output power, dual field plates were employed in conjunction with a buried gate structure.
- 2011-05-01
著者
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CHO Chun-Hyung
Department of Electronic & Electrical Engineering, Hongik University
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Lee Jae-gil
School Of Electronic And Electrical Engineering Hongik University
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Cha Ho-young
School Of Electronic And Electrical Engineering Hongik University:department Of Electronic & Ele
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Cha Ho-young
School Of Electrical And Computer Engineering Cornell University
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Cho Chun-hyung
Department Of Electronic & Electrical Engineering Hongik University
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Cho Chun-Hyung
Department of Electrical Engineering, 200 Broun Hall, Auburn University, Auburn, AL 36849, U.S.A.
関連論文
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