Normally-Off AlGaN/GaN-on-Si Power Switching Device with Embedded Schottky Barrier Diode
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概要
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We have demonstrated a novel AlGaN/GaN power switching device with an embedded Schottky barrier diode. The normally-off transistor mode was implemented with a recessed metal--oxide--semiconductor heterostructure field-effect transistor (MOSHFET) configuration in which a Schottky barrier diode (SBD) was embedded to flow the reverse current. The proposed device is very promising for use in high-efficiency converter and inverter ICs. The prototype device exhibited encouraging characteristics: a turn-on voltage of 2 V for the transistor and a forward turn-on voltage of 0.8 V for the embedded diode. The breakdown voltage for the anode-to-cathode distance of 10 μm was 966 V.
- 2013-03-25
著者
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Lee Jae-gil
School Of Electronic And Electrical Engineering Hongik University
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Cha Ho-young
School Of Electrical And Computer Engineering Cornell University
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Park Bong-ryeol
School Of Electronic And Electrical Engineering Hongik University
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Cha Ho-Young
School of Electronic and Electrical Engineering, Hongik University, Seoul 121-791, Korea
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Park Bong-Ryeol
School of Electronic and Electrical Engineering, Hongik University, Seoul 121-791, Korea
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