Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon
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概要
- 論文の詳細を見る
We have fabricated VDP (van der Pauw) stress sensors on (111) silicon surfaces. This work focuses on a study of strain effects in VDP stress sensors, which were generally ignored in previous works, for the precise measurements of die stresses in electronic packages. The stress sensitivity was observed to be approximately 10% larger for p-type VDP sensors compared to n-type VDP sensors.
- (社)電子情報通信学会の論文
- 2010-05-01
著者
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Cha Ho-Young
School of Electronic and Electrical Engineering, Hongik University
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CHO Chun-Hyung
Department of Electronic & Electrical Engineering, Hongik University
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Cha Ho-young
School Of Electronic & Electrical Engineering College Of Engineering Hongik University
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Cha Ho-young
School Of Electrical And Computer Engineering Cornell University
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CHOI Ginkyu
Department of Electronic & Electrical Engineering, College of Science and Technology, Hongik Univers
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Choi Ginkyu
Department Of Electronic & Electrical Engineering College Of Science And Technology Hongik Unive
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Cho Chun-hyung
Department Of Electronic & Electrical Engineering College Of Science And Technology Hongik Unive
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Cho Chun-Hyung
Department of Electrical Engineering, 200 Broun Hall, Auburn University, Auburn, AL 36849, U.S.A.
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