The Effect of the Transverse Sensitivity on Measurement of the Piezoresistive Coefficients of Silicon

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概要

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• Stress sensing test chips fabricated on (001) and (111) silicon surfaces are capable of measuring die stresses arising from assembly and packaging operations. The chips incorporate resistor or transistor sensing elements that are used to measure stresses via the observation of the changes in their resistivity/mobility. The piezoresistive behavior of such sensors is characterized by three piezoresistive (pi) coefficients, which are electro-mechanical material constants. Stress sensor rosette elements are often designed with serpentine layouts in order to achieve acceptable resistance for measurement and to eliminate area lost to multiple contacts. The transverse sensitivity of such designs induces errors in the values of piezoresistive coefficients extracted from the sensor elements, and two cases are important. First, in order to determine values of the three fundamental piezoresistive coefficients of silicon, any transverse sensitivity dependencies must be corrected for, or eliminated from, the calibration elements. In contrast, however, application of the resistors as stress sensors requires the use of uncorrected values of the piezoresistive coefficients in the stress data reduction. This work focuses on a study of transverse sensitivity effects in resistors fabricated in silicon and corrected values of the piezoresistive coefficients are confirmed experimentally by comparing pairs of resistive stress sensors (transverse and transverse-free) on the (001) silicon wafer plane. The stress sensitivity for transverse-free cases was observed to be approximately 25–30% larger than that for transverse cases. The effects of crystallographic misalignment and lateral diffusion that occur during the fabrication process are also included in the discussion.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-05-25

著者

• Jaeger Richard

  Department of Electrical Engineering, 200 Broun Hall, Auburn University, Auburn, AL 36849, U.S.A.

• Suhling Jeffrey

  Department of Mechanical Engineerig, 270 Ross Hall, Auburn University, Auburn, AL 36849, U.S.A.

• Cho Chun-Hyung

  Department of Electrical Engineering, 200 Broun Hall, Auburn University, Auburn, AL 36849, U.S.A.

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