In_xGa_<1-x>Nの光学フォノンモードの組成依存性に関する研究

概要

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In_xGa_<1-x>N is well known as a material which can choose the energy band gap corresponding to the wave length of the blue light. In_xGa_<1-x>N is already used as an active layer of high intensive blue LED or blue Laser Diode. It is also found that, however, the quality of crystalline in this material is getting worse as increasing of indium composition (molar fraction) x. We have studied the compositional dependence of the optical phonon modes in cubic In_xGa_<1-x>N theoretically using by random element isodisplacement linear chain model. As the results, the theoretical fitting for LO and TO phonon modes is found a good agreement with the experimental data which showed "one-mode" type behavior. It was also shown in analysis of the oscillator strength of each TO phonon modes.
豊田工業高等専門学校の論文