ラマン散乱によるInGaNの成長不安定性に関する研究

概要

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We have studied the growth instability of InGaN ternary Nitride alloys. A theoretical analysis for asymmetric broadening of phonon mode in measured Raman spectrum was examined with the aid of spatial correlation model. We suppose that the relaxation of the selection rule of the phonon is caused by the deterioration of the crystal, and the asymmetric broadening of Raman spectra is resulted from that Especially, the asymmetric broadening of the E2 phonon mode is enhanced in the region of immiscibility by increasing the indium molar fraction. On the theoretical analyses, we compared with two kinds of dispersion curves tentatively. We could find the correlation length which corresponds to the decay length of the phonon was on the order of 〜10nm. This value is on the same order of magnitude as the size of the columnar structure suggested by transmission electron microscope analyses.
豊田工業高等専門学校の論文