MOVPE成長GaN薄膜の高密度励起条件における励起子非弾性散乱過程による発光特性(窒化物及び混晶半導体デバイス)

概要

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We have investigated photoluminescence (PL) properties of a high quality GaN thin film grown by metal-organic vapor phase epitaxy under intense excitation conditions in a wide temperature range from 10 to 300K. It is found that there are two types of PL band peculiar to intense excitation conditions. In a low temperature region below 80K, the PL process is dominated by exciton-exciton scattering, the so-called P emission. On the other hand, in a high temperature region above〜120K, a PL band, which is different from the P emission, appears. The energy spacing between the new PL band and the fundamental A exciton linearly increases with an increase in temperature. The energy spacing is estimated to be zero at absolute zero temperature by extrapolation of the temperature dependence. These PL profiles indicate that the PL band observed in the high temperature regime originates from exciton-electron scattering. Furthermore, we have confirmed that the exciton-electron scattering process produces optical gain leading to stimulated emission at room temperature.
社団法人電子情報通信学会の論文
2006-09-28