Interdiffusion in Mo/Ge and Mo/Si Multilayer Thin Films

概要

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Multilayered Mo/Ge and Mo/Si thin films have been prepared by dual rf-sputtering technique, and the interdiffusion and structural change on annealing have been investigated by X-ray diffraction measurements. X-ray diffractometry shows that for the modulation wavelength λ shorter than 5 nm both Mo and Ge(Si) sublayers are amorphous, while for λ longer than 5 nm crystalline bcc structure appears in Mo sublayers. The interdiffusivities have been determined from the decay rate of satellite peak intensity around (000). The temperature dependence of the effective interdiffusivities in Mo/Ge and Mo/Si multilayer films is, respectively, expressed as D^^〜_<λ(Mo/Ge)>=1.3x10^<-16>exp[-(115±7)kJmol^<-1>/RT] m^2s^<-1>, and D^^〜_<λ(Mo/Si)>=2.0x10^<-16>exp[-(105±5)kJmol^<-1>/RT] m^2s^<-1>. On initial annealing, the satellite peak intensity decreases drastically and the modulation wavelength also decreases, which are interpreted to be due to structural relaxation and interdiffusion. The thermodynamic behaviour of the amorphous Mo-Ge system is discussed on the basis of the dependence of the effective interdiffusivity on λ.
東北大学の論文
1990-03-23