RFプラズマによる半導体製造装置排ガスの分解(CF_4分解の実験と数値シミュレーション)(OS.4 機能性流体と先端融合化)

概要

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We investigated the decomposition of CF_4 in an exhaust gas from semiconductor manufacturing equipment using the inductively coupled plasma (ICP) reactor with RF power supply. The purpose of this study is to develop the PFCs removal system which can be used as the same power supply for both plasma processing and CF_4 emission clean-up system in semiconductor manufacturing processes. This leads to achieve higher efficiency and more economical than conventional systems. CF_4 .decomposition was carried out as a parameter of the ratio of CF_4 to O_2, pressure and RF power. We also measured CO_2 concentration after CF_4 decomposition in order to examine whether the decomposition process is based on the reaction that we intend. And we calculated electron temperature and electron density distribution in ICP reactor.
社団法人日本機械学会の論文
2004-03-03