220 低気圧RFプラズマを用いた半導体製造装置排ガスCF_4の高効率分解技術(OS-5 環境負荷ミニマイズのための熱流体・環境工学の展開(2))

概要

論文の詳細を見る
We investigated the decomposition of CF_4 in an exhaust gas from semiconductor manufacturing equipment using the inductively coupled plasma (ICP) reactor with RF power supply. The purpose of this study is to develop the PFC_S removal system which can be used as the same power supply for both plasma processing and CF_4 emission clean-up system in semiconductor manufacturing processes. This leads to achieve higher efficiency and more economical than conventional systems. The CF_4 decomposition was carried out as a parameter of the power and the total flow rate using the 2MHz and 4MHz power supplies. As a result, The CF_4 decomposition efficiency using 2MHz power supply was significantly higher than that of 4MHz power supply under the same power, pressure and total flow rate. When we considered to estimate how much the equivalency of the global warming CO_2 gas, we conclude that the amount of greenhouse-gases exhaust decreases 1.27% for decomposing CF_4.
一般社団法人日本機械学会の論文
2004-03-17