A New Cleaning Technique for X-Ray Masks in Alkaline Solutions by Direct Control of Electrochemical Potential
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-12-30
著者
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MARUMOTO Kenji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Ootera Hiroki
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tuda Mutumi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Marumoto Kenji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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KINUGAWA Masaru
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Kinugawa Masaru
Advanced Technology R&d Center Mitsubishi Electric Corporation
関連論文
- A Principle of Deposition of Ultra Low and Uniform Stress Absorber for X-Ray Mask
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- Evaluation of Acid Diffusibility in a Chemical Amplification Resist Using Acidic Water-Soluble Film
- 50 nm Pattern Printing by Narrowband Proximity X-Ray Lithography
- Etching for 0.15-μm-Level Patterns with Low Microloading Effect Using Beam Plasmas Generated by Gas Puff Plasma Sources
- A New Cleaning Technique for X-Ray Masks in Alkaline Solutions by Direct Control of Electrochemical Potential
- Stress Stability of W-Ti X-Ray Absorber in Patterning Process
- An Evaluation of High Acceleration Voltage Electron Beam Writing on X-Ray Masks
- Validity of Double and Triple Gaussian Functions for Proximity Effect Correction in X-ray Mask Writing
- Influence of Optical Parameters of Synchrotron Radiation Lithography Beamline on Pattern Replication
- Electron Beam Writing Techniques for Fabricating Highly Accurate X-Ray Masks
- Control of X-Ray Beam Fluctuation in Synchrotron Radiation Lithography Beamline
- Mechanisms for Microscopic Nonuniformity in Low-Pressure, High-Density Plasma Etching of Poly-Si in Cl_2 and Cl_2/O_2 Mixtures
- Profile Evolution during Pulsed Plasma Etching
- Effects of O2 Addition on BCl3/Cl2 Plasma Chemistry for Al Etching
- Observation of Microscopic Nonuniformity during Overetch in Polysilicon Gate Etching
- An Evaluation of High Acceleration Voltage Electron Beam Writing on X-Ray Masks
- Theoretical Analysis on Mechanical Deformation of Membrane-Based Photomask Blanks
- Highly Selective Removal of Residual Deposited Films and Oxide Hard Masks on Polysilicon Gate Electrodes in Anhydrous HF Gases
- Profile Evolution during Cold Plasma Beam Etching of Silicon
- A Principle of Deposition of Ultra Low and Uniform Stress Absorber for X-Ray Mask