Profile Evolution during Pulsed Plasma Etching
スポンサーリンク
概要
- 論文の詳細を見る
Evolution of etched profiles has been studied numerically during pulsed low-pressure, high-density plasma etching of Si in Cl_2. The time-dependent behavior of chlorinated surface coverage and etch rate was calculated assuming Langmuir adsorption kinetics. Etched profiles were then simulated using the time-averaged etch rates obtained, to examine etch anisotropy and microscopic uniformity. The model predicted that under pulsed plasma conditions, the surface coverage is increased at the bottom of microstructures, resulting in highly anisotropic, aspect-ratio independent etching.
- 社団法人応用物理学会の論文
- 1996-10-15
著者
-
Ono Kouichi
Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Ae
-
Tuda Mutumi
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Ono Kouichi
Advanced Technology R&d Center Mitsubishi Electric Corporation
関連論文
- In Situ Fourier Transform Infrared Measurements of Si Surface and Bulk Plasmas in Cl_2/O_2 and HBr/O_2 Electron Cyclotron Resonance Plasma Etching: Influence of Oxygen on Reaction Products
- A New Cleaning Technique for X-Ray Masks in Alkaline Solutions by Direct Control of Electrochemical Potential
- Conformal Step Coverage of (Ba,Sr)TiO_3 Films Prepared by Liquid Source CVD Using Ti(t-BuO)_2(DPM)_2
- Conformal Step Coverage of (Ba,Sr)TiO_3 Films Prepared by Liquid Source CVD Using Ti(t-BuO)_2(DPM)_2
- Mechanisms of X-Ray Radiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors
- Influence of Buffer Layers and Barrier Metals on Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition
- Mechanisms of Synchrotron X-Ray Irradiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors
- A Mass Spectrometric Study of Reaction Mechanisms in Chemical Vapor Deposition of (Ba, Sr)TiO_3 Films
- (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes
- Reaction Mechanism and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition
- Mechanisms for Microscopic Nonuniformity in Low-Pressure, High-Density Plasma Etching of Poly-Si in Cl_2 and Cl_2/O_2 Mixtures
- Profile Evolution during Pulsed Plasma Etching
- Effects of O2 Addition on BCl3/Cl2 Plasma Chemistry for Al Etching
- Observation of Microscopic Nonuniformity during Overetch in Polysilicon Gate Etching
- Highly Selective Removal of Residual Deposited Films and Oxide Hard Masks on Polysilicon Gate Electrodes in Anhydrous HF Gases
- Profile Evolution during Cold Plasma Beam Etching of Silicon