New Scanning Photoluminescence Technique for Quantitative Mapping the Surface Recombination Velocity in InP and Related Materials
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概要
- 論文の詳細を見る
This paper introduces a new approach, based on room temperature (RT) scanning photoluminescence (SPL) measurements, for non-destructive quantitative mapping of the surface or interface recombination velocity in compound semiconductor structures. The developed technique is validated and applied here to spatially resolved evaluation of the surface recombination velocity of InP substrates and InGaAs(C)/InP heterostructures.
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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Cui D
Univ. Michigan Mi Usa
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PAVLIDIS Dimitris
Department of Electrical Engineering and Computer Science, The University of Michigan
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Cui Delong
Department Of Electrical Engineering And Computer Science The University Of Michigan
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SERMAGE Bernard
France Telecom R&D
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Sermage Bernard
France Telecom Cnet
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Sermage Bernard
France Telecom Cnet Laboratoire De Bagneux
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Blanchet Robert
Laboratoire D'electronique (umr Cnrs No. 5512) Ecole Centrale De Lyon
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KRAWCZYK Stanislas
Laboratoire d'Electronique (UMR CNRS No. 5512), Ecole Centrale de Lyon
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BEJAR Moez
Laboratoire d'Electronique (UMR CNRS No. 5512), Ecole Centrale de Lyon
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KHOUKH Abdelaziz
Department de Physique, Faculte des Sciences UCD
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Bejar Moez
Laboratoire D'electronique (umr Cnrs No. 5512) Ecole Centrale De Lyon
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Khoukh Abdelaziz
Department De Physique Faculte Des Sciences Ucd
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Pavlidis Dimitris
Department Of Electrical Engineering And Computer Science The University Of Michigan
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Pavlidis Dimitris
Department Of Electrical Engineering University Of Michigan
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Krawczyk Stanislas
Laboratoire D'electronique (umr Cnrs No. 5512) Ecole Centrale De Lyon
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