DC and High Frequency Characterization of Metalorganic Chemical Vapor Deposition (MOCVD) Grown InP/InGaAs PNP Heterojunction Bipolar Transistor
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概要
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InP/InGaAs PNP heterojunction bipolar transistor (HBT) layers have been grown by metalorganic chemical vapor deposition (MOCVD) and devices have been fabricated using a self-aligned processing technology. A zinc-doped InP layer has been employed as the wide-bandgap emitter layer for the PNP HBT. The base layer used a 500 A thick n-type InGaAs layer doped at 5 x 10^<18> cm^<-3>. Successful high frequency operation of these devices has been demonstrated. A single-emitter 1 x 20 μm^2 MOCVD-grown PNP InP/InGaAs HBT achieved current gain cu [
- 社団法人応用物理学会の論文
- 2002-02-28
著者
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PAVLIDIS Dimitris
Department of Electrical Engineering and Computer Science, The University of Michigan
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Cui Delong
Department Of Electrical Engineering And Computer Science The University Of Michigan
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HSU Shawn
Department of Electrical Engineering and Computer Science, The University of Michigan
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Pavlidis Dimitris
Department Of Electrical Engineering And Computer Science The University Of Michigan
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Hsu Shawn
Department Of Electrical Engineering And Computer Science The University Of Michigan
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