A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si(<Special Issue>Heterostructure Microelectronics with TWHM2003)
スポンサーリンク
概要
- 論文の詳細を見る
Schottky gas sensors of CO were fabricated using high quality AlGaN/GaN/Si heterostructures. The CO sensors show good sensitivity in the temperature range of 250 to 300℃ (530%, at 160 ppm CO in N_2) and fast response comparable with SnO_2 sensors. A two-region linear regime was observed for the dependence of sensitivity on CO concentration. GaN sensors on Si substrate offer the possibility of integration with Si based electronics. The gas sensors show slow response with time the change of material properties possibly in the presence of large thermal stress
- 社団法人電子情報通信学会の論文
- 2003-10-01
著者
-
Zhao Guangyuan
Department Of Electrical Engineering And Computer Science The University Of Michigan
-
Piner Edwin
Nitronex Corporation
-
PAVLIDIS Dimitris
Department of Electrical Engineering and Computer Science, The University of Michigan
-
HUBBARD Seth
National Research Council Associate at NASA Glenn Research Center
-
SCHWANK Johannes
Department of Chemical Engineering, The University of Michigan
-
HUBBARD Seth
Department of Electrical Engineering and Computer Science, The University of Michigan
-
SUTTON William
Department of EECS, Univ. of Michigan
-
Sutton William
Department Of Eecs Univ. Of Michigan
-
Schwank Johannes
Department Of Chemical Engineering The University Of Michigan
-
Pavlidis D
Department Of High Frequency Electronics Institute Of Microwave Engineering Technische Universitat D
-
Pavlidis Dimitris
Department Of Electrical Engineering And Computer Science The University Of Michigan
関連論文
- First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs(Heterostructure Microelectronics with TWHM2003)
- Improvement of CO Sensitivity in GaN-Based Gas Sensors(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Yellow Luminescence Centers of GaN
- A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si(Heterostructure Microelectronics with TWHM2003)
- GaN-Based Gunn Diodes : Their Frequency and Power Performance and Experimental Considerations(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Low-Power Consumption InGaAs PIN Diode Switches for V-band Applications
- AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate
- New Scanning Photoluminescence Technique for Quantitative Mapping the Surface Recombination Velocity in InP and Related Materials
- DC and High Frequency Characterization of Metalorganic Chemical Vapor Deposition (MOCVD) Grown InP/InGaAs PNP Heterojunction Bipolar Transistor
- Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si_3N_4
- Activity of Ethylene Epoxidation over High Surface Area Alumina Support Au-Ag Catalysts
- Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Yellow Luminescence Centers of GaN