Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications(GaN-Based Devices,<Special Section>Heterostructure Microelectronics with TWHM2005)
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概要
- 論文の詳細を見る
Sensing elements based on AlGaN/GaN HEMT and Schottky diode structures have been investigated in relation with the strain sensitivity of their characteristics. Piezoresistance of the Al_<0.3>Ga_<0.7>N/GaN HEMT-channel as well as changes in the current-voltage characteristics of the Schottky diodes have been observed with gauge factor (GF) values ranging between 19 and 350 for the selected biasing conditions. While a stable response to strain was measured, the observed temperature dependence of the channel resistance demonstrates the need for a systematic characterisation of the sensor properties to allow compensation of the observed temperature effects.
- 社団法人電子情報通信学会の論文
- 2006-07-01
著者
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Pavlidis Dimitris
Technische Univ. Darmstadt Deu
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Pavlidis Dimitris
Department Of Electrical Engineering And Computer Science The University Of Michigan
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YILMAZOGLU Oktay
Department of High Frequency Electronics, Institute of Microwave Engineering, Technische Universitat
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MUTAMBA Kabula
Department of High Frequency Electronics, Institute of Microwave Engineering, Technische Universitat
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MBARGA Marie
Department of High Frequency Electronics, Institute of Microwave Engineering, Technische Universitat
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Mbarga Marie
Department Of High Frequency Electronics Institute Of Microwave Engineering Technische Universitat D
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Mutamba Kabula
Department Of High Frequency Electronics Institute Of Microwave Engineering Technische Universitat D
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Yilmazoglu Oktay
Department Of High Frequency Electronics Institute Of Microwave Engineering Technische Universitat D
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- Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si_3N_4
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- Yellow Luminescence Centers of GaN