First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs(<Special Issue>Heterostructure Microelectronics with TWHM2003)

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We report for the first time the design, process and characterization of InP-based micrometer emitter InGaAlAs/GaAsSh/InP Douhle HBTs (DHBTs) and their microwave performance. The layer structure riot only allows the implementation of InP collector free of current blocking, hut also enables small turn-on voltage and ballistic launching of electrons due to the positive conduction hand discontinuity of emitter to base. The DHBT structure was grown on nominal (001) InP substrates using MBE Solid Si and CBr_4 gas were used for P-type and p-type doing respectively Fahricated large DHBTs showed high DC gain (> 80), small turn-on voltage 0.62V, almost zero offset voltage, and nearly ideal base and collector current characteristics (ideality factors 〜 1.0 for both B-E and B-C junctions) Small DHBTs demonstrated V_<CEO> > 8V and stable operation at high current density exceeding 100 kA/cm^2. Maximum f_T of 57 GHz and maximum f_<max> of 66 GHz were achieved from 1 × 20 μm^2 devices at similar bias condition・J_c = 8.0 × 10^4 A/cm^2 and V V_<CE> =3.5 V. The JnGaAlAs/GaAsSb/InP DHBTs appear to he a very promising HBT solution having simultaneous excellent RE and DC performances.
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2003-10-01