Improvement of CO Sensitivity in GaN-Based Gas Sensors(GaN-Based Devices,<Special Section>Heterostructure Microelectronics with TWHM2005)

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概要

• 論文の詳細を見る

• Pt Schottky diode gas sensors for carbon monoxide (CO) were fabricated using slightly Si doped bulk GaN grown on sapphire substrate. The influence of diode size, Pt thickness, operating temperature on gas sensitivity was investigated. CO sensitivity was improved six times by optimizing the size and thickness of the Pt contact. Surface restructuring and morphology changes of Pt film were observed after thermal annealing. These changes are enhanced as the film thickness is reduced further and contribute to improve CO sensitivity.

• 社団法人電子情報通信学会の論文
• 2006-07-01

著者

• Zhao Guangyuan

  Department Of Electrical Engineering And Computer Science The University Of Michigan

• PAVLIDIS Dimitris

  Department of Electrical Engineering and Computer Science, The University of Michigan

• CHO Eunjung

  Department of High Frequency Electronics, Institute of Microwave Engineering, Technische Universitat

• HUBBARD Seth

  National Research Council Associate at NASA Glenn Research Center

• SCHWANK Johannes

  Department of Chemical Engineering, The University of Michigan

• Schwank Johannes

  Department Of Chemical Engineering The University Of Michigan

• Pavlidis D

  Department Of High Frequency Electronics Institute Of Microwave Engineering Technische Universitat D

• Pavlidis Dimitris

  Department Of Electrical Engineering And Computer Science The University Of Michigan

• Cho Eunjung

  Technische Univ. Darmstadt Deu

• Cho Eunjung

  Department Of High Frequency Electronics At The Technische Universitat Darmstadt

関連論文

• First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs(Heterostructure Microelectronics with TWHM2003)
• Improvement of CO Sensitivity in GaN-Based Gas Sensors(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Yellow Luminescence Centers of GaN
• A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si(Heterostructure Microelectronics with TWHM2003)
• GaN-Based Gunn Diodes : Their Frequency and Power Performance and Experimental Considerations(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• Low-Power Consumption InGaAs PIN Diode Switches for V-band Applications
• AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate
• New Scanning Photoluminescence Technique for Quantitative Mapping the Surface Recombination Velocity in InP and Related Materials
• DC and High Frequency Characterization of Metalorganic Chemical Vapor Deposition (MOCVD) Grown InP/InGaAs PNP Heterojunction Bipolar Transistor
• Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si_3N_4
• Activity of Ethylene Epoxidation over High Surface Area Alumina Support Au-Ag Catalysts
• Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Yellow Luminescence Centers of GaN

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