Yellow Luminescence Centers of GaN
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概要
- 論文の詳細を見る
The method for measuring Shockley–Read–Hall (SRH) lifetime of yellow centers of GaN was developed. The capture-section ratio (150) of hole to electron is extracted by comparing the experimental and theoretical results. A marked increase in the SRH lifetime (from 0.75 to 7.0 ns) with the increasing in Si doping density (from $1.5\times 10^{17}$ to $8.8\times 10^{18}$ cm-3) was observed, and it is attributed to some Si dopant substituting for the Ga vacancy. In addition, it is also found that the YL centers are an important factor limiting the performance of GaN-based devices.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-05-15
著者
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Zhao Guangyuan
Department Of Electrical Engineering And Computer Science The University Of Michigan
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HUBBARD Seth
Department of Electrical Engineering and Computer Science, The University of Michigan
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Pavlidis Dimitris
Department Of Electrical Engineering And Computer Science The University Of Michigan
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Hubbard Seth
Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122, U.S.A.
-
Pavlidis Dimitris
Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122, U.S.A.
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Zhao Guangyuan
Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122, U.S.A.
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