GaN-Based Gunn Diodes : Their Frequency and Power Performance and Experimental Considerations(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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Theoretical and experimental aspects of GaN-based Gunn diodes are reviewd. Since the threshold field for Gunn effect in GaN(F_<TH> > 150kV/cm)is reported to be much higher than in GaAs(F_<TH> = 3.5kV/cm), the active layer of GaN-based devices can be made thinner(< 3μm)and doped higher(> 10^<17> cm^<-3>)than in conventional Gunn diodes. Consequently, GaN-based devices are expected to offer increased frequency and power capabilities. The advantages of GaN are demonstrated with the help of large-signal simulations of GaN and GaAs Gunn diodes. The simulations revealed that GaN diodes can be operated at a higher frequency(up to 760GHz vs.100GHz)and with larger output power density(10^5W/cm^2 vs.10^3W/cm^2)than GaAs diodes. Epitaxial layers of n^+/n^-/n^+GaN(10^<19>cm^<-3>/10^<17>cm^<-3>/10^<19>cm^<-3>)designed for millimeter-wave operation were grown using MOCVD on SiC substrates. GaN Gunn diodes with 4μm-thick active layers were fabricated using specially developed dry etching techniques. The RIE was optimized to allow deep low-damage etching ad allowed reduction of contact resistivity of etched layers(R_C ≈ 10^<-6>Ωcm^2).GaN diodes fabricated on SiC substrates with high thermal conductivity were tested on-wafer and demonstrated high voltage and current capability(60V and 2.5A). High frequency testing of these devices requires proper dicing, mounting on efficient heatsinks, and connection to appropriate oscillator cavities.
社団法人電子情報通信学会の論文
2001-10-01

GaN-Based Gunn Diodes : Their Frequency and Power Performance and Experimental Considerations(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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