High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
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概要
- 論文の詳細を見る
- 2012-08-01
著者
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PAVLIDIS Dimitris
the Department of Electrical Engineering and Computer Science, The University of Michigan
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Abe Masayuki
3d-bio Co. Ltd.
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ABE Masayuki
3D-bio Co., Ltd.
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ANG Kian
NOVITAS-Nanoelectronics Centre of Excellance, Nanyang Technological Univ.
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NG Geok
NOVITAS-Nanoelectronics Centre of Excellance, Nanyang Technological Univ.
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MANOJ Kumar
NOVITAS-Nanoelectronics Centre of Excellance, Nanyang Technological Univ.
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PAVLIDIS Dimitris
the Dept. of High Frequency Electronics, Technische Univ. Darmstadt
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HOFSTETTER Rene
NOVITAS-Nanoelectronics Centre of Excellance, Nanyang Technological Univ.
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KOGUSHI Noriaki
Takion Co., Ltd.
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RETNAM Louis
NOVITAS-Nanoelectronics Centre of Excellance, Nanyang Technological Univ.
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WANG Hong
NOVITAS-Nanoelectronics Centre of Excellance, Nanyang Technological Univ.
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JIN Chon
the Dept. of High Frequency Electronics, Technische Univ. Darmstadt
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Wang Hong
NOVITAS-Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
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Ng Geok
NOVITAS-Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
関連論文
- GaN-Based Gunn Diodes : Their Frequency and Power Performance and Experimental Considerations(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
- High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
- Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon