High-Quality InGaAsN Growth by Metalorganic Vapor-Phase Epitaxy Using Nitrogen Carrier Gas and Dimethylhydrazine, Tertiarybutylarsine as Group V Precursors

概要

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We have successfully grown GaAsN and InGaAsN layers on GaAs substrate using atmospheric-pressure metalorganic vapor-phase epitaxy (MOVPE). Dimethylhydrazine and tertiarybutylarsine have been employed as sources of nitrogen and arsenic, respectively. To investigate the incorporation behavior of nitrogen [N] in GaAsN and InGaAsN layers as a function of ambient gas in the reactor, growth was performed in the presence of hydrogen H_2 and nitrogen N_2 gases. Good structural quality and surface morphology have been obtained with both gases. Furthermore, with N_2 ambient gas, an enhancement of nitrogen incorporation has been observed. The nonradiative carrier lifetime is about 25 ns and is independent of the ambient gas used. This value is acceptable for laser applications.
社団法人応用物理学会の論文
1999-02-28