Influence of Zinc Co-Doping on Carbon Doped InGaAs : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-02-15
著者
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Benchimol Jean-louis
Opto+ Groupement D'intdret Economique
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KEIPER Dietmar
Department of Electronics, Royal Institute of Technology (KTH)
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SERMAGE Bernard
France Telecom R&D
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Sermage Bernard
France Telecom R&d
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Sermage Bernard
France Telecom Cnet
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Keiper Dietmar
Department Of Electronics Royal Institute Of Technology (kth)
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Keiper Dietmar
Department Of Electronics Laboratory Of Semiconductor Materials Royal Institute Of Technology
関連論文
- Influence of Zinc Co-Doping on Carbon Doped InGaAs : Semiconductors
- New Scanning Photoluminescence Technique for Quantitative Mapping the Surface Recombination Velocity in InP and Related Materials
- Systematics of Electrical Conductivity across InP to GaAs Wafer-Fused Interfaces
- Metalorganic Vapour Phase Epitaxy Growth of InP-based Heterojunction Bipolar Transistors with Carbon Doped InGaAs Base Using Tertiarybutylarsine and Tertiarybutylphosphine in N_2 Ambient
- High-Quality InGaAsN Growth by Metalorganic Vapor-Phase Epitaxy Using Nitrogen Carrier Gas and Dimethylhydrazine, Tertiarybutylarsine as Group V Precursors