Metalorganic Vapour Phase Epitaxy Growth of InP-based Heterojunction Bipolar Transistors with Carbon Doped InGaAs Base Using Tertiarybutylarsine and Tertiarybutylphosphine in N_2 Ambient

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概要

• 論文の詳細を見る

• A process for growth of heterostructure bipolar transistors(HBT)using tertiarybutylarsine(TBA)and tertiarybutylphosphine(TBP)in N_2 ambient is realised, which is compatible with a high temperature overgrowth, thus suitable for the vertical integration of a laser structure on top of an HBT. A high growth temperature for the C-InGaAs base is favourable, to ensure no degradation during subsequent growth. Increasing the growth temperature after the base from 500°C to 680°C within the emitter layer instead of at the base-emitter interface was found to improve the ideality factors, the dc gain and the turn-on voltage.

• 社団法人応用物理学会の論文
• 2000-11-15

著者

• Prost Werner

  Solid State Electronics Department Gerhard-mercator-university Duisburg

• Keiper Dietmar

  Department Of Electronics Royal Institute Of Technology(kth)

• Keiper Dietmar

  Department Of Electronics Laboratory Of Semiconductor Materials Royal Institute Of Technology

• VELLING Peter

  Solid State Electronics Department, Gerhard-Mercator-University Duisburg

• AGETHEN Michael

  Solid State Electronics Department, Gerhard-Mercator-University Duisburg

• TEGUDE Franz-Josef

  Solid State Electronics Department, Gerhard-Mercator-University Duisburg

• LANDGREN Gunnar

  Department of Electronics, Royal Institute of Technology(KTH)

• Tegude Franz-josef

  Solid State Electronics Department Gerhard-mercator-university Duisburg

• Velling Peter

  Solid State Electronics Department Gerhard-mercator-university Duisburg

• Landgren Gunnar

  Department Of Electronics Royal Institute Of Technology(kth)

• Agethen Michael

  Solid State Electronics Department Gerhard-mercator-university Duisburg

関連論文

• Influence of Zinc Co-Doping on Carbon Doped InGaAs : Semiconductors
• Systematics of Electrical Conductivity across InP to GaAs Wafer-Fused Interfaces
• Metalorganic Vapour Phase Epitaxy Growth of InP-based Heterojunction Bipolar Transistors with Carbon Doped InGaAs Base Using Tertiarybutylarsine and Tertiarybutylphosphine in N_2 Ambient
• C-10-5 InAsナノワイヤMISFETの高周波特性評価(C-10.電子デバイス,一般セッション)
• Carrier Transport Effects in 1.3 μm Multiple Quantum Well InGaAsP Laser Design
• InAsナノワイヤMISFETの高周波特性評価(機能ナノデバイス及び関連技術)
• InAsナノワイヤMISFETの高周波特性評価(機能ナノデバイス及び関連技術)
• InAsナノワイヤMISFETの高周波特性評価
• InAsナノワイヤMISFETの高周波特性評価

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