Tegude Franz-josef | Solid State Electronics Department Gerhard-mercator-university Duisburg
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概要
関連著者
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Prost Werner
Solid State Electronics Department Gerhard-mercator-university Duisburg
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Tegude Franz-josef
Solid State Electronics Department Gerhard-mercator-university Duisburg
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Blekker Kai
Solid-state Electronics Department University Of Duisburg-essen
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Blekker Kai
Solid-State Electronics Department, University of Duisburg-Essen
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和保 孝夫
上智大学理工学部
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和保 孝夫
化合物半導体デバイスの高信頼化技術論文特集編集委員会
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Tegude Franz-josef
Solid-state Electronics Department University Of Duisburg-essen
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Prost Werner
Solid-state Electronics Department University Of Duisburg-essen
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渡邉 龍郎
上智大学理工学部
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乙幡 温
上智大学理工学部
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和保 孝夫
上智大学 理工学部
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乙幡 温
上智大学 理工学部
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渡邉 龍郎
上智大学 理工学部
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Keiper Dietmar
Department Of Electronics Royal Institute Of Technology(kth)
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Keiper Dietmar
Department Of Electronics Laboratory Of Semiconductor Materials Royal Institute Of Technology
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VELLING Peter
Solid State Electronics Department, Gerhard-Mercator-University Duisburg
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AGETHEN Michael
Solid State Electronics Department, Gerhard-Mercator-University Duisburg
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TEGUDE Franz-Josef
Solid State Electronics Department, Gerhard-Mercator-University Duisburg
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LANDGREN Gunnar
Department of Electronics, Royal Institute of Technology(KTH)
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Velling Peter
Solid State Electronics Department Gerhard-mercator-university Duisburg
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Landgren Gunnar
Department Of Electronics Royal Institute Of Technology(kth)
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Agethen Michael
Solid State Electronics Department Gerhard-mercator-university Duisburg
著作論文
- Metalorganic Vapour Phase Epitaxy Growth of InP-based Heterojunction Bipolar Transistors with Carbon Doped InGaAs Base Using Tertiarybutylarsine and Tertiarybutylphosphine in N_2 Ambient
- C-10-5 InAsナノワイヤMISFETの高周波特性評価(C-10.電子デバイス,一般セッション)
- InAsナノワイヤMISFETの高周波特性評価(機能ナノデバイス及び関連技術)
- InAsナノワイヤMISFETの高周波特性評価(機能ナノデバイス及び関連技術)
- InAsナノワイヤMISFETの高周波特性評価
- InAsナノワイヤMISFETの高周波特性評価