Carrier Transport Effects in 1.3 μm Multiple Quantum Well InGaAsP Laser Design

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概要

• 論文の詳細を見る

• We have investigated the influence of the barrier height on the performance of InGaAsP MQW lasers emitting at 1.3 μm via simulations, direct hole transport time measurements and laser evaluation. The results from the simulation showed that very high barriers result in an increase in hole and electron concentrations at the p-side of the multiple quantum well (MQW). This leads to a severe increase in the Auger recombination rate. The measured hole transport time is clearly dependent on the barrier height in the MQW. Metal organic vapour phase epitaxy fabricated lasers with up to twelve periods and optimised barrier heights showed internal efficiency values above 95%, internal losses below 10 cm^<-1>, threshold densities as low as 60 Acm^<-2>/well and T_0 values as high as 79 K in the 20-80℃ temperature range. Our conclusion is that attention should be given to the valence band carrier distribution when designing low threshold, high optical output MQW lasers suitable for elevated temperature operation.

• 社団法人応用物理学会の論文
• 1999-02-28

著者

• Landgren G

  Royal Inst. Technol. (kth) Kista Swe

• Landgren Gunnar

  Department Of Electronics Royal Institute Of Technology(kth)

• SILFVENIUS Christofer

  Department of Electronics, Laboratory of Semiconductor Materials, Royal Institute of Technology (KTH

• MARCINKEVICIUS Saulius

  Department of Physics II, Royal Institute of Technology (KTH)

• Silfvenius Christofer

  Department Of Electronics Laboratory Of Semiconductor Materials Royal Institute Of Technology (kth)

• Marcinkevicius Saulius

  Department Of Physics Ii Royal Institute Of Technology (kth)

関連論文

• Metalorganic Vapour Phase Epitaxy Growth of InP-based Heterojunction Bipolar Transistors with Carbon Doped InGaAs Base Using Tertiarybutylarsine and Tertiarybutylphosphine in N_2 Ambient
• Carrier Transport Effects in 1.3 μm Multiple Quantum Well InGaAsP Laser Design

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