Characteristics of Silicon Dioxide Film Prepared by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone with Alcohol Addition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-04-30

著者

• IKEDA Koichi

  NTT LSI Laboratories

• MAEDA Masahiko

  NTT LSI Laboratories

• 池田 浩一

  NTT LSI研究所

• Nakayama Satoshi

  NTT LSI Laboratories

関連論文

• TiN Thin Film Prepared by Chermical Vapor Deposition Method Using Cp_2Ti(N_3)_2
• Effect of Oxygen Doping into SiBN Ternary Film
• TEOS/O_3常圧CVD法によるシリコン酸化膜の成膜過程
• The Behavior of Alkoxy-Functional Groups on Atmospheric-Pressure Chemical Vapor Deposition Using Alkoxysilane and Ozone
• Characteristics of Silicon Dioxide Film Prepared by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone with Alcohol Addition
• Study of HF-Treated Heavily-Doped Si Surface Using Contact Angle Measurements
• Effect of Added Ethanol in Atmospheric-Pressure Chemical Vapor Deposition Reaction Using Tetraethoxysilane and Ozone
• Diffusion and Segregation of Nitrogen in Polycrystalline Silicon and at the Poly-Si/SiO_2 Interface
• Behavior of Alkoxy-Functional Groups on Atmospheric-Pressure Chemical Vapor Deposition Using Alkoxysilane and Ozone
• Evaluation of Hot-Hole Induced Interface Traps at the Tunneling SiO_2(3.5nm)-Si Interface by the Conductance Technique

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