Effect of Oxygen Doping into SiBN Ternary Film

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-09-20

著者

• Maeda M

  Ntt Telecommunications Energy Technol. Lab. Kanagawa Jpn

• MAEDA Masahiko

  NTT LSI Laboratories

関連論文

• TiN Thin Film Prepared by Chermical Vapor Deposition Method Using Cp_2Ti(N_3)_2
• Effect of Oxygen Doping into SiBN Ternary Film
• The Behavior of Alkoxy-Functional Groups on Atmospheric-Pressure Chemical Vapor Deposition Using Alkoxysilane and Ozone
• Characteristics of Silicon Dioxide Film Prepared by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone with Alcohol Addition
• Study of HF-Treated Heavily-Doped Si Surface Using Contact Angle Measurements
• Effect of Added Ethanol in Atmospheric-Pressure Chemical Vapor Deposition Reaction Using Tetraethoxysilane and Ozone
• Behavior of Alkoxy-Functional Groups on Atmospheric-Pressure Chemical Vapor Deposition Using Alkoxysilane and Ozone

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