Diffusion and Segregation of Nitrogen in Polycrystalline Silicon and at the Poly-Si/SiO_2 Interface

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Sakai Tetsushi

  Ntt Lsi Laboratories

• Nakayama Satoshi

  NTT LSI Laboratories

関連論文

• Characteristics of Silicon Dioxide Film Prepared by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone with Alcohol Addition
• Diffusion and Segregation of Nitrogen in Polycrystalline Silicon and at the Poly-Si/SiO_2 Interface
• Evaluation of Hot-Hole Induced Interface Traps at the Tunneling SiO_2(3.5nm)-Si Interface by the Conductance Technique

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