Study of ECR Hydrogen Plasma Treatment on Poly-Si Thin Film Transistors : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
In order to improve the characteristics of poly-Si thin film transistors (TFT's), hydrogen plasma treatment using electron cyclotron resonance plasma (ECR plasma treatment) has been studied. ECR plasma treatment has improved carrier mobility and the ON/OFF current ratio of poly-Si TFT's, which have been found to be greater than those using conventional hydrogen plasma treatment with radio frequency plasma. The improvement in the poly-Si TFT's characteristics is due to the reduction in the carrier trap density at the poly-Si grain boundary. Furthermore, the ECR plasma treatment improves leakage current.
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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Takeshita T
Department Of Hygiene And Preventive Medicine Osaka University School Of Medicine
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Takeshita Tatsuya
Ntt Opto-electronics Labolatories
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Takeshita Tatsuya
Ntt Opto-electronics Laboratories
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Takeshita Tatsuya
Department Of Social And Environmental Medicine Osaka University Graduate School Of Medicine F1
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KOGURE Osamu
NTT Opto-Electronics Laboratories
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UNAGAMI Takashi
NTT Opto-Electronics Labolatories
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Kogure O
Ntt Opto‐electronics Lab. Kanagawa
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Unagami T
Faculty Of Science And Engineering Teikyo University
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Takeshita Tatsuya
Department of Social and Environmental Medicine, Osaka University Graduate School of Medicine
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KOGURE Osamu
NTT Opto-Electronics Labolatories
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