Study on Narrow-Stripe Polycrystalline Silicon Thin-Film Transistors : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
N-channel thin-film transistors which have narrow channel stripes (narrow-stripe TFT's) have been proposed to improve the characteristics of poly-Si TFT's. The carrier mobility of narrow-stripe TFT's is larger than that of conventional structure TFT's. It is found that the mobility increase is due to the reduction of the potential-barrier height at the poly-Si grain boundary and the potential-barrier height decreases with decreasing channel stripe width. Furthermore, after hydrogen-plasma treatment, the carrier mobility in narrow-stripe TFT's with 0.9μm wide stripes becomes 7.4 cm^2/(V・s) which is more than three times that of conventional TFT's.
- 社団法人応用物理学会の論文
- 1988-10-20
著者
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Takeshita T
Department Of Hygiene And Preventive Medicine Osaka University School Of Medicine
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Takeshita Tatsuya
Ntt Opto-electronics Labolatories
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Takeshita Tatsuya
Ntt Opto-electronics Laboratories
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Takeshita Tatsuya
Department Of Social And Environmental Medicine Osaka University Graduate School Of Medicine F1
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TAKESHITA Tatsuya
NTT Laboratories
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UNAGAMI Takashi
NTT Laboratories
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KOGURE Osamu
NTT Laboratories
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Kogure O
Ntt Opto‐electronics Lab. Kanagawa
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Unagami T
Faculty Of Science And Engineering Teikyo University
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Takeshita Tatsuya
Department of Social and Environmental Medicine, Osaka University Graduate School of Medicine
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