Effects of ECR Hydrogen-Plasma Treatment on Narrow-Stripe Polycrystalline Silicon Thin-Film Transistors
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概要
- 論文の詳細を見る
The characteristics of thin-film transistors (TFT's) have been examined to determine the effects of a narrow-stripe structure of polycrystalline silicon in the channel region and of a hydrogen-plasma treatment utilizing electron cyclotron resonance (ECR hydrogen-plasma treatment). After this treatment, the carrier mobility, even for small-grain poly-Si, achieves 11.3 cm^2/(V・s) for the narrow-stripe TFT. This high carrier mobility can be obtained according to the remarkable reduction of the potential barrier height of poly Si, which is attained by making poly-Si narrow and by ECR hydrogen-plasma treatment.
- 社団法人応用物理学会の論文
- 1989-03-20
著者
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Takeshita T
Department Of Hygiene And Preventive Medicine Osaka University School Of Medicine
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Takeshita Tatsuya
Ntt Opto-electronics Labolatories
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Takeshita Tatsuya
Ntt Opto-electronics Laboratories
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Takeshita Tatsuya
Department Of Social And Environmental Medicine Osaka University Graduate School Of Medicine F1
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KOGURE Osamu
NTT Opto-Electronics Laboratories
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UNAGAMI Takashi
NTT Opto-Electronics Labolatories
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Kogure O
Ntt Opto‐electronics Lab. Kanagawa
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Unagami T
Faculty Of Science And Engineering Teikyo University
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Takeshita Tatsuya
Department of Social and Environmental Medicine, Osaka University Graduate School of Medicine
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KOGURE Osamu
NTT Opto-Electronics Labolatories
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