Low-Threshold Strained-Layer InGaAs Ridge Waveguide Lasers
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概要
- 論文の詳細を見る
Strained-layer InGaAs graded-index separate confinement heterostructure single-quantum-well(SQW) lasers have been fabricated. The threshold current dependence on cavity length using a 150-μm-wide broad contact laser yielded a transparency current of 49 A/cm^2 and a differential gain coefficient of 10.8 cm/A, values which are both superior to those of conventional GaAs SQW lasers. A CW threshold current of fabricated 3-μm-wide ridge waveguide lasers was reduced to 2.8 mA by HR-HR coating at a lasing wavelength of 972 nm.
- 社団法人応用物理学会の論文
- 1990-07-20
著者
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Takeshita T
Department Of Hygiene And Preventive Medicine Osaka University School Of Medicine
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Takeshita Tatsuya
Ntt Opto-electronics Labolatories
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Takeshita Tatsuya
Ntt Opto-electronics Laboratories
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Takeshita Tatsuya
Department Of Social And Environmental Medicine Osaka University Graduate School Of Medicine F1
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Uehara S
Seikei Univ. Tokyo Jpn
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OKAYASU Masanobu
NTT Opto-electronics Laboratories
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UEHARA Shingo
NTT Opto-electronics Laboratories
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KOGURE Osamu
NTT Opto-Electronics Laboratories
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Okayasu M
Ntt Corp. Kanagawa Jpn
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Takeshita Tatsuya
Department of Social and Environmental Medicine, Osaka University Graduate School of Medicine
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KOGURE Osamu
NTT Opto-Electronics Labolatories
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