High-Output Power and Fundamental Transverse Mode InGaAs/GaAs Strained-Layer Laser with Ridge Waveguide Structure

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概要

• 論文の詳細を見る

• Low-threshold, high-efficiency and high-output-power operation is achieved in an InGaAs/GaAs strained-layer ridge waveguide. A light output power of 80 mW for fundamental transverse mode, and 270 mW for higher-order transverse mode lasers have been obtained.

• 社団法人応用物理学会の論文
• 1991-06-15

著者

• Takeshita T

  Department Of Hygiene And Preventive Medicine Osaka University School Of Medicine

• Takeshita Tatsuya

  Ntt Opto-electronics Labolatories

• Takeshita Tatsuya

  Ntt Opto-electronics Laboratories

• Takeshita Tatsuya

  Department Of Social And Environmental Medicine Osaka University Graduate School Of Medicine F1

• Uehara S

  Seikei Univ. Tokyo Jpn

• OKAYASU Masanobu

  NTT Opto-electronics Laboratories

• UEHARA Shingo

  NTT Opto-electronics Laboratories

• Okayasu M

  Ntt Corp. Kanagawa Jpn

• Takeshita Tatsuya

  Department of Social and Environmental Medicine, Osaka University Graduate School of Medicine

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