Characterization of Domain-Inverted Layers in LiTaO_3 by Line-Focus-Beam Acoustic Microscopy

概要

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A characterization procedure of domain-inverted layers employed in LiTa0_3 optoelectronic devices by line-focus-beam acoustic microscopy is explored. A special specimen of -Z-cut LiTa0_3 with a domain-inverted layer of about 1.8 μm thickness, processed under the fabrication conditions for quasi-phase-matching second-harmonic-generation devices, was prepared for measurements of the leaky surface acoustic wave (LSAW) velocities inthe frequency range 100 to 300 MHz. Intrinsic decreases in LSAW velocity were obtairned with the rate of 0.127 m/s/MHz, which were in excellent agreement with the theoretical results. These resulted from formation of a domain-inverted layer on the -Z surface. Slight variations in domain-inverted depth on the specimen, caused by variation in process temperature, were also detected, with the measurement resolution of 0.01 μm at 225 MHz.
社団法人応用物理学会の論文
1997-07-15