Low Activation Energy by Polarization in a Floating Gate Structure

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概要

• 論文の詳細を見る

• This paper describes a new and essential mechanism for the low activation energy of charge retention, based on the electrostatic energy change of the floating gate due to a decrease in the stored electrons. The electrostatic potential in the floating gate when a positive space charge is generated at the interface is given by Debye-Huckel. The electron cloud shifts and polarization arises. At this time, a pair consisting of a positive space charge and polarized electron cloud forms an exciton. An electron which forms an exciton recombines with a positive charge by tunneling through SiO_2. As a result, the mechanism that an electron is emitted above the work function of 3.2 eV at the Si-SiO_2 interface by supplying a thermionic activation energy of 1.2 eV has been revealed.

• 社団法人応用物理学会の論文
• 1993-10-15

著者

• TAMARU Keikichi

  Department of Electronics and Communication, Graduate School of Engineering, Kyoto University

• Nozawa H

  Kyoto Univ. Kyoto Jpn

• Tamaru Keikichi

  Department Of Communications And Computer Engineering Kyoto University

• Nozawa Hiroshi

  Semiconductor Device Engineering Laboratory Toshiba Corporation

• TAMARU Keikichi

  Department of Electronics, Kyoto University

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