Measurement of the Out-Diffusion Profile of Oxygen in Silicon

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概要

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• The concentration profile of out-diffused oxygen in Czochralski silicon crystals has been measured in identical specimens by X-ray lattice parameter measurement, charged-particle activation analysis, and spreading-resistance measurement after thermal donor formation. The experimental profiles obtained by the X-ray method and charged-particle activation analysis were consistent, but the spreading-resistance method yielded less reliable results. The surface concentration of oxygen is discussed on the basis of Henry's law.

• 社団法人応用物理学会の論文
• 1985-10-20

著者

• Watanabe Toshihide

  Nhk Science And Technical Research Laboratories

• SUGITA Yoshimitsu

  Department of Physics, Toyama University

• Okabe Toshio

  Department Of Physics Faculty Of Science Kyoto University

• Nozaki Tadashi

  The Institute Of Physical And Chemical Research

• Kawata Hiroshi

  Department of Physics, Tokyo Institute of Technology

• Itoh Yoshiko

  The Institute Of Physical And Chemical Research (riken)

• Itoh Yoshiko

  The Institute Of Physical And Chemical Research

• NAKAMICHI Shuhei

  Department of Physics, Toyama University

• YOSHIKAWA Shigeo

  NHK Science and Technical Research Laboratories

• Nakamichi Shuhei

  Department Of Physics Toyama University:hitachi-maxell Co.

• Sugita Yoshimitsu

  Department Of Physics Toyama University

• Kawata Hiroshi

  Department Of Physics Toyama University:national Laboratory For High Energy Physics

• Kawata Hiroshi

  Department Of Physics Tokyo Institute Of Technology

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