Chemical Behavior of Carbon in High-purity Silicon in the Dissolution and Fusion of the Matrix

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概要

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• The behavior of carbon in high-purity silicon in the dissolution and fusion of the matrix was studied by the <SUP>11</SUP>C-tracer technique. Silicon samples containing <SUP>11</SUP>C, either atomistically dispersed or mainly coagulated as SiC, were prepared. In alkali dissolution, no loss of <SUP>11</SUP>C was observed, and carbon originally dispersed in silicon was found to behave in a similar way to colloidal carbon under subsequent treatments. By HF–HNO<SUB>3</SUB>–KIO<SUB>4</SUB> dissolution and succeeding KMnO<SUB>4</SUB> treatment, the dispersed carbon was oxidized almost quantitatively but the SiC coagulates were not completely decomposed. In alkali fusion a part of <SUP>11</SUP>C was lost. By fusion with Pb<SUB>3</SUB>O<SUB>4</SUB>-B<SUB>2</SUB>O<SUB>3</SUB>, carbon in both states was converted into CO<SUB>2</SUB>. The results suggest a possible application of activation analysis to the measurement of the coagulation degree of carbon in high-purity silicon.

• 公益社団法人 日本化学会の論文

著者

• Nozaki Tadashi

  The Institute Of Physical And Chemical Research

関連論文

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• Simultaneous Charged Particle Activation Analysis of Carbon and Boron in Gallium Arsenide
• Chemical Behavior of Carbon in High-purity Silicon in the Dissolution and Fusion of the Matrix

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