CPAA Study on Carbon, Boron and Oxygen in LEC-GaAs

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概要

• 論文の詳細を見る

• Carbon, boron and oxygen in liquid-encapsulated Czochralski(LEC) semi-insulating GaAs crystals grown in three different ambiences (Ar, Ar$+1$% O2, and Ar$+1$% CO) were analyzed by charged particle activation analysis (CPAA) using the 12C(d, n)13N, natB(d, xn)11C, and 16O(3He, p)18F reactions. An addition of 1% O2 or CO gas to a conventional Ar ambience during crystal growth was found to increase C contamination by a factor of up to 35 ($1.8\times 10^{16}$cm-3), while B and O concentrations remained unchanged for the most part.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-02-20

著者

• Itoh Yoshiko

  The Institute Of Physical And Chemical Research

• Fukushima Hiroto

  Japan Chemical Analysis Center

• Takeda Kenji

  Japan Chemical Analysis Center

• Itoh Yoshiko

  The Institute of Physical and Chemical Research, Hirosawa, Wako-shi, Saitama 351-1

• Nozaki Tadashi

  Department of Hygienic Science, Kitazato University, Kitazato, Sagamihara, Kanagawa 228

• Kadota Yoshinori

  Sumitomo Metal Corp., Kunitomi District Div., Kunitomi, Iwanai-gun, Hokkai-doh 048-21

• Fukushima Hiroto

  Japan Analysis Center, Sannou, Chibashi, Chiba 281

関連論文

• Measurement of the Out-Diffusion Profile of Oxygen in Silicon
• Stable, High-Efficiency Moderator with Tungsten Mesh
• Simultaneous Charged Particle Activation Analysis of Carbon and Boron in Gallium Arsenide
• Data Analysis System f or Environmental Radiation Monitoring
• Effect of Carbon and Oxygen Precipitation on Gold Diffusion in Silicon
• CPAA Study on Carbon, Boron and Oxygen in LEC-GaAs

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