Geometrical Correction Factor for Semiconductor Resistivity Measurements by Four-Point Probe Method
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概要
- 論文の詳細を見る
Geometrical correction factors are derived for semiconductor resistivity measurements by the four-point probe method on rectangular parallelepipeds. The conformal transformation method leads to the same numerical values as that obtained from the solutions of Poisson's equation in the lower limit of the sample thickness. Some numerical results are given as a function of the width, length, and thickness of the rectangular parallelepiped, the probe separation, and the probe position.
- 社団法人応用物理学会の論文
- 1984-11-20
著者
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Yamashita Masato
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Agu Masahiro
Department Of Electronic Engineering Ibaraki University
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Agu Masahiro
Department Of Electrical And Electronic Engineering Ibaraki University
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