Effect of Substrate Surface on Alignment of Liquid Crystal Molecules
スポンサーリンク
概要
- 論文の詳細を見る
Investigations were made of tilt angles of the molecular long axis in a liquid crystal layer sandwiched between two substrates, which were prepared by evaporating silicon at oblique incidence. Measurements of the dependence on the incident angle were carried out, which showed that the tilt angles varied from 3°to 28.4°for the incident angles ranging from 67°to 86°. Observations of the deposited film surfaces by use of electron microscopy revealed that they had a sawtooth-like structure whose shape also depended on the incident angle. It was suggested that the tilt angle was strongly affected by surface structures of the substrates.
- 社団法人応用物理学会の論文
- 1976-11-05
著者
-
YAMASHITA Masato
Department of Electrical Engineering, University of Industrial Technology
-
Amemiya Yoshifumi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
-
Yamashita Masato
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
関連論文
- New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
- InGaAsP/InP Native Oxide Stripe Lasers
- InGaAsP/InP Double-Heterostructure Photodiodes
- Resistivity Correction Factor for the Four-Ring Probe Method
- Resistivity Correction Factor for the Four-Probe Method: Experiment III
- Resistivity Correction Factor for the Four-Probe Method : Experiment I
- Researches on Biological and Electromagnetic Environments in RF and Microwave Regions in Japan (Special Issue on Biological Effects of Electromagnetic Fields)
- Effect of Substrate Surface on Alignment of Liquid Crystal Molecules
- Structure of Protective Rust Layers Formed on Weathering Steels by Long-term Exposure in the Industrial Atmospheres of Japan and North America
- Critical Surface Tension of Silicon Films and Aligning Properties of Nematic MBBA Molecules
- Drift Mobility of Positive Ions in Nematic MBBA at Low Electric Field
- Resistivity Correction Factor for Four-Probe Method on Circular Semiconductors I
- Resistivity Correction Factor for Four-Probe Method on Circular Semiconductors II : Techniques, Instrumentations and Measurement
- Geometrical Correction Factor for Semiconductor Resistivity Measurements by Four-Point Probe Method
- Geometrical Correction Factor for Resistivity of Semiconductors by the Square Four-Point Probe Method
- Resistivity Correction Factor for the Four-Probe Method: Experiment II
- Resistivity Correction Factor for the Four-Circular-Probe Method