Determination of Thickness of Thin Thermal Oxide Layers on Czochralski-Grown Silicon Wafers from their Longitudinal Optical Vibrational Mode

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Determination of Thickness of Thin Thermal Oxide Layers on Czochralski-Grown Silicon Wafers from their Longitudinal Optical Vibrational Mode
Influence of Native Oxide on Oxygen Concentration in Czochralski-Grown Silicon Wafers Determimed by p-Polarized Brewster Angle Incidence Infrared Spectroscopy
Higher Frequency Shifts of a Surface Vibration Mode Accompanied by Native Oxide Growth on Silicon in Air
Dependence of Time Dependent Dielectric Breakdown Characteristics on Mechanism for Silicon Epitaxial Growth on Misoriented Czochralski Silicon Crystal
Determination of Interstitial Oxygen Concentration in Oxygen-Precipitated Silicon Wafers by Low-Temperature High-Resolution Infrared Spectroscopy
Determination of Thickness of Thin Thermal Oxide Layers on Czochralski-Grown Silicon Wafers from their Longitudinal Optical Vibrational Mode

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