Influence of Native Oxide on Oxygen Concentration in Czochralski-Grown Silicon Wafers Determimed by p-Polarized Brewster Angle Incidence Infrared Spectroscopy
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概要
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The influence of native oxide on the oxygen concentration in Czochralski-grown silicon (CZ-Si) wafers has been studied by p-polarized Brewster angle incidence infrared spectroscopy (PPBIR). It was found that the oxygen concentration changed only slightly (within 1%) by observation of the vibration bands of the native oxide which are located near the oxygen vibration band at 1106 cm^<-1>.
- 社団法人応用物理学会の論文
- 1995-02-15
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関連論文
- Determination of Thickness of Thin Thermal Oxide Layers on Czochralski-Grown Silicon Wafers from their Longitudinal Optical Vibrational Mode
- Influence of Native Oxide on Oxygen Concentration in Czochralski-Grown Silicon Wafers Determimed by p-Polarized Brewster Angle Incidence Infrared Spectroscopy
- Higher Frequency Shifts of a Surface Vibration Mode Accompanied by Native Oxide Growth on Silicon in Air
- Determination of Interstitial Oxygen Concentration in Oxygen-Precipitated Silicon Wafers by Low-Temperature High-Resolution Infrared Spectroscopy
- Determination of Thickness of Thin Thermal Oxide Layers on Czochralski-Grown Silicon Wafers from their Longitudinal Optical Vibrational Mode