Shirai Hiroshi | Toshiba Ceramics Co. Ltd. Research And Development Center
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概要
関連著者
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Shirai Hiroshi
Toshiba Ceramics Co. Ltd. Research And Development Center
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Takeda Ryuji
Toshiba Ceramics Co. Ltd. Research And Development Center
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TAKEDA Ryuji
Toshiba Ceramics Co., Ltd., Research and Development Center
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SAITO Hiroyuki
Toshiba Ceramics Co., Ltd., Research and Development Center
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Takeda Ryuji
Toshiba Ceramics Co., Ltd., Research and Development Center, 30 Soya, Hadano, Kanagawa 257, Japan
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Shirai Hiroshi
Toshiba Ceramics Co., Ltd., Research and Development Center, 30 Soya, Hadano, Kanagawa 257, Japan
著作論文
- Determination of Thickness of Thin Thermal Oxide Layers on Czochralski-Grown Silicon Wafers from their Longitudinal Optical Vibrational Mode
- Influence of Native Oxide on Oxygen Concentration in Czochralski-Grown Silicon Wafers Determimed by p-Polarized Brewster Angle Incidence Infrared Spectroscopy
- Higher Frequency Shifts of a Surface Vibration Mode Accompanied by Native Oxide Growth on Silicon in Air
- Determination of Interstitial Oxygen Concentration in Oxygen-Precipitated Silicon Wafers by Low-Temperature High-Resolution Infrared Spectroscopy
- Determination of Thickness of Thin Thermal Oxide Layers on Czochralski-Grown Silicon Wafers from their Longitudinal Optical Vibrational Mode