Determination of Interstitial Oxygen Concentration in Oxygen-Precipitated Silicon Wafers by Low-Temperature High-Resolution Infrared Spectroscopy

スポンサーリンク

概要

• 論文の詳細を見る

• The low-temperature high-resolution infrared absorption spectra have been measured on oxygen-precipitated Czochralski-grown silicon wafers in the 1100 cm^<-1> range at approximately 13.8 K, using the p-polarized Brewster angle incidence configuration. The multiple peaks due to interstitial oxygen have been successfully observed without interference fringes. It has been verified that the interstitial oxygen concentration in oxygen-precipitated wafers is precisely determined by low-temperature high-resolution p-polarized Brewster angle incidence infrared spectroscopy.

• 社団法人応用物理学会の論文
• 1995-09-01

著者

• Shirai Hiroshi

  Toshiba Ceramics Co. Ltd. Research And Development Center

• SAITO Hiroyuki

  Toshiba Ceramics Co., Ltd., Research and Development Center

関連論文

• Automatic tap control system for 132kV phase shifting transformer (保護リレーシステム研究会 電力系統の保護・監視制御・計測解析技術)
• Determination of Thickness of Thin Thermal Oxide Layers on Czochralski-Grown Silicon Wafers from their Longitudinal Optical Vibrational Mode
• Influence of Native Oxide on Oxygen Concentration in Czochralski-Grown Silicon Wafers Determimed by p-Polarized Brewster Angle Incidence Infrared Spectroscopy
• Higher Frequency Shifts of a Surface Vibration Mode Accompanied by Native Oxide Growth on Silicon in Air
• Determination of Interstitial Oxygen Concentration in Oxygen-Precipitated Silicon Wafers by Low-Temperature High-Resolution Infrared Spectroscopy
• Determination of Thickness of Thin Thermal Oxide Layers on Czochralski-Grown Silicon Wafers from their Longitudinal Optical Vibrational Mode

スポンサーリンク