Determination of Thickness of Thin Thermal Oxide Layers on Czochralski-Grown Silicon Wafers from their Longitudinal Optical Vibrational Mode

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概要

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• Infrared transmission spectra of the longitudinal optical (LO) mode (1250 cm-1) of thin thermal oxide layers (10–100 Å, formed at 800–950° C in O2 or O2 diluted with N2) on silicon wafers were measured at p-polarized 73.7° incidence, based on the Berreman effect. An excellent linear correlation was found between the LO absorbance and the oxide thickness, which exhibits no dependence upon the oxygen content in silicon.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-07-15

著者

• Shirai Hiroshi

  Toshiba Ceramics Co. Ltd. Research And Development Center

• Takeda Ryuji

  Toshiba Ceramics Co. Ltd. Research And Development Center

• Takeda Ryuji

  Toshiba Ceramics Co., Ltd., Research and Development Center, 30 Soya, Hadano, Kanagawa 257, Japan

• Shirai Hiroshi

  Toshiba Ceramics Co., Ltd., Research and Development Center, 30 Soya, Hadano, Kanagawa 257, Japan

関連論文

• Determination of Thickness of Thin Thermal Oxide Layers on Czochralski-Grown Silicon Wafers from their Longitudinal Optical Vibrational Mode
• Influence of Native Oxide on Oxygen Concentration in Czochralski-Grown Silicon Wafers Determimed by p-Polarized Brewster Angle Incidence Infrared Spectroscopy
• Higher Frequency Shifts of a Surface Vibration Mode Accompanied by Native Oxide Growth on Silicon in Air
• Dependence of Time Dependent Dielectric Breakdown Characteristics on Mechanism for Silicon Epitaxial Growth on Misoriented Czochralski Silicon Crystal
• Determination of Interstitial Oxygen Concentration in Oxygen-Precipitated Silicon Wafers by Low-Temperature High-Resolution Infrared Spectroscopy
• Determination of Thickness of Thin Thermal Oxide Layers on Czochralski-Grown Silicon Wafers from their Longitudinal Optical Vibrational Mode

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